High Resolution:
Rocking curves
Reciprocal space maps
Six-axis sample stage on high resolution
goniometer.
Absolute angular
resolution = 0.0001 degrees.
High Resolution setup for epitaxial layers
Incident beam optics
Hybrid monochromater consisting of
closely coupled x-ray mirror and 4 bounce Ge 220 mocnochroter.
Resolution
= 18 arc-seconds.
Diffracted beam optics
1. Fixed slit
or
2. Three bounce Ge 220 analyzer.
Resolution = 12 arc-seconds
·
High-resolution diffraction is a collection of application techniques
that is applied for the measurements of nearly-perfect materials. Most
semiconductor device structures, based on silicon, silicon-germanium, III-V
and II-VI compounds, are epitaxially grown from the gas phase onto a substrate.
These films are nearly-perfect crystalline films and contain a low dislocation
density. Properties of these films are largely determined by their composition
and structure. Information from these layers, such as layer thickness, composition,
strain and relaxation, can be obtained by measuring rocking curves and reciprocal
space maps using high-resolution optics. Defect structures inside the layers
can be revealed by X-ray topography.
Solutions for high-resolution diffraction.
High-resolution diffraction experiments require a highly monochromatic
beam with a well defined wavelength and equatorial divergence. PANalytical
X’Pert PRO MRD systems can be configured with a hybrid monochromator or
a high-resolution monochromator to fulfil these requirements. With PANalytical’s
X’Pert PRO Extended MRD system, an X-ray mirror and a high-resolution monochromator
can be placed in line to deliver an incident X-ray beam that is not only
highly monochromatic with a low divergence, but also has a high intensity.
This high intensity is used to uncover the weakest details in a diffraction
experiment.X’Pert Epitaxy and Smoothfit provides functionality to analyze
rocking curves, reciprocal space maps and wafer maps. Rocking curves can
be simulated and fitted using patented algorithms.
Reflectometry:
Grazing incidence diffraction
Film thickness and structure
Interfacial roughness
Reflectometry setup for thin layers.
Incident beam optics
X-ray mirror intensifies and
collimates line source beam
.
Diffracted beam optics
1. 0.27 degree collimator with graphite monochrometer
or
2. 0.09 degree collimator
Reflectometry is an analytical technique for investigating thin layers
using the effect of total external reflection of X-rays.In reflectivity
experiments, the X-ray reflection of a sample is measured around the critical
angle. Below the critical angle of total external reflection, X-rays penetrate
only a few nanometers into the sample. Above this angle the penetration depth
increases rapidly. At every interface where the electron density changes,
a part of the X-ray beam is reflected. The interference of these partially
reflected X-ray beams creates the oscillation pattern observed in reflectivity
experiments. From these reflectivity curves, layer parameters such as thickness
and density, interface and surface roughness can be determined.Reflectometry
is applied to characterize single and multi-layer structures and coatings
from amongst many others, magnetic, semiconducting and optical materials.
Solutions for reflectometry.
Experiments can be performed on PANalytical’s X’Pert PRO MRD or X’Pert
PRO MPD systems. A “De Wolff’s” beam knife can be applied to reduce the effective
reflecting area. A beam knife is advised when curved samples have to be
measured.Reflectometry data can be analysed with a choice of automatic fitting
procedures implemented in the X’Pert Reflectivity software package.